Title :
Report on a joint BIPM-EUROMET project for the fabrication of QHE samples by the LEP
Author :
Piquemal, Francois ; Geneves, Gerard ; Delahaye, Francois ; Andre, Jean-pierre ; Patillon, Jean-Noel ; Frijlink, Peter
Author_Institution :
Lab. Primaire d´´Electr.-Magnetisme, Fontenay-aux-Roses, France
fDate :
4/1/1993 12:00:00 AM
Abstract :
The quantum Hall effect (QHE) samples fabricated by LEP according to specifications intended to optimize their usefulness in metrology are described. Their measured characteristics, notably carrier density, carrier mobility at zero magnetic field, dependence of the quantized resistance on temperature, measuring current, and the quality of electrical contacts, are reported
Keywords :
III-V semiconductors; carrier density; carrier mobility; electric resistance measurement; gallium arsenide; measurement standards; quantum Hall effect; semiconductor technology; specimen preparation; AlGaAs-GaAs; BIPM-EUROMET project; LEP; MOVPE; QHE samples; carrier density; carrier mobility; electrical contacts; measuring current; protected wafer; quantized resistance; quantum Hall effect; temperature; unprotected wafer; zero magnetic field; Charge carrier density; Current measurement; Density measurement; Electric resistance; Electric variables measurement; Electrical resistance measurement; Fabrication; Hall effect; Magnetic field measurement; Metrology;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
