• DocumentCode
    1059334
  • Title

    Accurate extraction of parasitic series resistances and inductances for GaAs HFET

  • Author

    Wang, L. ; Xu, R.

  • Author_Institution
    Microwave Eng. Dept., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
  • Volume
    40
  • Issue
    16
  • fYear
    2004
  • Firstpage
    1021
  • Lastpage
    1022
  • Abstract
    An accurate extraction method of the parasitic series resistances and inductances for a GaAs HFET is presented. The measurement of S-parameters is under the condition of cold FET (vds=0 V, vgs=0 V), the extraction procedure is not a direct extraction method, but a based-on optimisation method using a genetic algorithm. Good agreement compared with measurement is achieved.
  • Keywords
    III-V semiconductors; S-parameters; circuit optimisation; electric resistance measurement; field effect transistors; gallium arsenide; genetic algorithms; inductance measurement; GaAs; GaAs HFET; S-parameter measurement; genetic algorithm; optimisation method; parasitic series inductances; parasitic series resistances;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20045370
  • Filename
    1322820
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1059334