Title :
IMPATT oscillation in SiC p+-n--n+ diodes with a guard ring formed by vanadium ion implantation
Author :
Arai, M. ; Ono, S. ; Kimura, C.
Author_Institution :
Microwave Div., New Japan Radio Co. Ltd, Saitama, Japan
Abstract :
SiC impact avalanche and transit time (IMPATT) diodes with a guard ring formed by vanadium ion implantation showed a peak output power of 1.8 W at 11.93 GHz. The guard ring reduced the electric field near the diode´s periphery and reduced the device temperature.
Keywords :
IMPATT oscillators; circuit oscillations; ion implantation; microwave oscillators; silicon compounds; vanadium; wide band gap semiconductors; 1.8 W; 11.93 GHz; IMPATT diodes; IMPATT oscillation; SiC diodes; SiC:V; diode temperature reduction; guard ring; impact avalanche and transit time diodes; vanadium ion implantation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20045312
