DocumentCode
1059390
Title
Free carrier absorption in silicon
Author
Schroder, Dieter K. ; Thomas, R. Noel ; Swartz, John C.
Author_Institution
Westinghouse Research Laboratories, Pittsburgh, PA
Volume
25
Issue
2
fYear
1978
fDate
2/1/1978 12:00:00 AM
Firstpage
254
Lastpage
261
Abstract
Free carrier absorption in heavily doped layers reduces the useful photon flux in the photoconductive region of extrinsic Si infrared detectors. A simple theory is developed which predicts the transmissivity of such layers as a function of their sheet resistance and the wavelength of the radiation. Experimental data over the 2.5-20 µm wavelength and 5-500 Ω/square sheet resistance range are given for both diffused and ion-implanted layers and also for polysilicon gases. The temperature dependence of both transmissivity and sheet resistance is investigated from 20 to 300 K.
Keywords
Degradation; Electromagnetic wave absorption; Impurities; Infrared detectors; Infrared imaging; Optical imaging; Photodetectors; Photonic band gap; Silicon devices; Temperature;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1978.19066
Filename
1479460
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