Title :
Bistable switching in a planar Gunn diode
Author :
Masuda, Masamitsu ; Ogura, Takeshi ; Koyama, Jiro
Author_Institution :
Osaka University, Osaka, Japan
fDate :
3/1/1978 12:00:00 AM
Abstract :
This paper presents experimental and theoretical results showing that bistable switching, due to an anode-triggered trapped domain (TD), can be realized in a Gunn diode with an anode notch. The characteristics of the anode-triggered TD have been made clear by computer simulations. Bistable switching has been confirmed experimentally by using a planar Gunn diode with a groove, which was intentionally dug close to the anode.
Keywords :
Anodes; Cathodes; Computer simulation; Diodes; Doping profiles; Electron mobility; Fluctuations; Gunn devices; Semiconductor process modeling; Switches;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19081
