DocumentCode
1059558
Title
Bistable switching in a planar Gunn diode
Author
Masuda, Masamitsu ; Ogura, Takeshi ; Koyama, Jiro
Author_Institution
Osaka University, Osaka, Japan
Volume
25
Issue
3
fYear
1978
fDate
3/1/1978 12:00:00 AM
Firstpage
358
Lastpage
361
Abstract
This paper presents experimental and theoretical results showing that bistable switching, due to an anode-triggered trapped domain (TD), can be realized in a Gunn diode with an anode notch. The characteristics of the anode-triggered TD have been made clear by computer simulations. Bistable switching has been confirmed experimentally by using a planar Gunn diode with a groove, which was intentionally dug close to the anode.
Keywords
Anodes; Cathodes; Computer simulation; Diodes; Doping profiles; Electron mobility; Fluctuations; Gunn devices; Semiconductor process modeling; Switches;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1978.19081
Filename
1479475
Link To Document