DocumentCode :
1059570
Title :
A 50 to 94-GHz CMOS SPDT Switch Using Traveling-Wave Concept
Author :
Chao, Shih-Fong ; Wang, Huei ; Su, Chia-Yi ; Chern, John G J
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
Volume :
17
Issue :
2
fYear :
2007
Firstpage :
130
Lastpage :
132
Abstract :
A fully integrated single-pole-double-throw transmit/receive switch has been designed and fabricated in standard bulk 90-nm complementary metal-oxide semiconductor (CMOS) technology. Traveling wave concept was used to minimize the insertion loss at higher frequency and widen the operating bandwidth. The switch exhibits a measured insertion loss of 2.7 -dB, an input 1-dB compression point (input P1 dB) of 15 dBm, and a 29-dB isolation at the center frequency of 77 GHz. The total chip size is only 0.57 times 0.42 mm 2 including all testing pads. To our knowledge, this is the first CMOS switch demonstrated beyond 50 GHz, and the performances rival those monolithic microwave integrated circuit switches using standard GaAs PHEMTs
Keywords :
CMOS integrated circuits; field effect MIMIC; field effect transistor switches; millimetre wave devices; 50 to 94 GHz; CMOS integrated circuits; MOSFET switches; SPDT switch; millimeter wave switches; traveling wave concept; Bandwidth; CMOS technology; Frequency measurement; Insertion loss; Isolation technology; Loss measurement; MOS devices; Semiconductor device measurement; Switches; Switching circuits; Complementary metal-oxide semiconductor (CMOS) integrated circuits; metal–oxide-semiconductor field-effect transistor (MOSFET) switches; millimeter-wave switches;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2006.890339
Filename :
4079623
Link To Document :
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