DocumentCode
1059571
Title
A Proton Pumping Gate Field-Effect Transistor for a Hydrogen Gas Sensor
Author
Tsukada, Keiji ; Yamaguchi, Tomiharu ; Kiwa, Toshihiko
Author_Institution
Okayama Univ., Okayama
Volume
7
Issue
9
fYear
2007
Firstpage
1268
Lastpage
1269
Abstract
A proton pumping field-effect transistor (FET), consisting of a triple layer gate structure of a Pd/proton conducting polymer/Pt, has been developed. The hydrogen sensitivity was controlled by the bias change between Pt and Pd. Furthermore, two kinds of methods for the readout of DC and AC modulation can be achieved. According to the decrement of the bias frequency, the modulated output was increased. This characteristic realizes a gas sensor with a self-check function.
Keywords
field effect transistors; gas sensors; hydrogen; AC modulation; DC modulation; FET; Pd/proton conducting polymer/Pt structure; hydrogen gas sensor; hydrogen sensitivity; modulated output; proton pumping gate field-effect transistor; self-check function; triple layer gate structure; Biomembranes; Chemical sensors; FETs; Gas detectors; Hydrogen; Polymers; Protons; Safety; Sensor systems; Voltage; Field-effect transistor (FET); hydrogen gas sensor; proton; self check function;
fLanguage
English
Journal_Title
Sensors Journal, IEEE
Publisher
ieee
ISSN
1530-437X
Type
jour
DOI
10.1109/JSEN.2007.901268
Filename
4276699
Link To Document