DocumentCode :
1059591
Title :
Improved enhancement/depletion GaAs MOSFET using anodic oxide as the gate insulator
Author :
Colquhoun, Alexander ; Kohn, Erhard ; Hartnagel, Hans L.
Author_Institution :
University of Newcastle upon Tyne, Newcastle upon Tyne, England
Volume :
25
Issue :
3
fYear :
1978
fDate :
3/1/1978 12:00:00 AM
Firstpage :
375
Lastpage :
376
Abstract :
A GaAs MOSFET with a semi-insulating substrate is described, operating in either the enhancement or the deed depletion modes and showing the highest transconductance reported so far, and a rise time better than 1 ns. The behavior is fully explained by the 
characteristics of equivalent MOS capacitors.
characteristics of equivalent MOS capacitors.Keywords :
Annealing; Etching; Gallium arsenide; Insulation; MOSFET circuits; Metallization; Ohmic contacts; Resists; Substrates; Transconductance;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1978.19084
Filename :
1479478
Link To Document :
