• DocumentCode
    1059591
  • Title

    Improved enhancement/depletion GaAs MOSFET using anodic oxide as the gate insulator

  • Author

    Colquhoun, Alexander ; Kohn, Erhard ; Hartnagel, Hans L.

  • Author_Institution
    University of Newcastle upon Tyne, Newcastle upon Tyne, England
  • Volume
    25
  • Issue
    3
  • fYear
    1978
  • fDate
    3/1/1978 12:00:00 AM
  • Firstpage
    375
  • Lastpage
    376
  • Abstract
    A GaAs MOSFET with a semi-insulating substrate is described, operating in either the enhancement or the deed depletion modes and showing the highest transconductance reported so far, and a rise time better than 1 ns. The behavior is fully explained by the C/V characteristics of equivalent MOS capacitors.
  • Keywords
    Annealing; Etching; Gallium arsenide; Insulation; MOSFET circuits; Metallization; Ohmic contacts; Resists; Substrates; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1978.19084
  • Filename
    1479478
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1059591