A Compact 6.5-W PHEMT MMIC Power Amplifier for Ku-Band Applications

Author

Lin, Che-Hung ; Liu, Hong-Zhi ; Chu, Chen-Kuo ; Huang, Hou-Kuei ; Liu, Chi-Chuan ; Chang, Ching-Hsueh ; Wu, Chang-Luen ; Chang, Chian-Sern ; Wang, Yeong-Her

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan

Volume

17

Issue

2

fYear

2007

Firstpage

154

Lastpage

156

Abstract

A compact 6.5-W AlGaAs/InGaAs/GaAs PHEMT monolithic microwave integrated circuit (MMIC) power amplifier (PA) for Ku-band applications is proposed. This two-stage amplifier with chip size of 8.554mm² (3.64mmtimes2.35mm) is designed to fully match 50-Omega input and output impedance. Under 8V and 2000mA dc bias condition, the PA deliver 38.1dBm (6.5W) saturated output power, 10.5-dB small signal gain and peak power added efficiency of 24.6% from 13.6 to 14.2GHz. This MMIC also achieved the best power densities (760mW/mm²) at Ku band reported to date

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium arsenide; indium compounds; 10.5 dB; 13.6 to 14.2 GHz; 2.35 mm; 2000 mA; 3.64 mm; 50 ohm; 6.5 mW; 8 V; AlGaAs-InGaAs-GaAs; Ku band; MMIC power amplifiers; monolithic microwave integrated circuit; power added efficiency; pseudomorphic high electron mobility transistor; Application specific integrated circuits; Gallium arsenide; Impedance matching; Indium gallium arsenide; MMICs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; PHEMTs; Power amplifiers; Ku-band; monolithic microwave integrated circuit (MMIC); power amplifier (PA); pseudormorphic high electron mobility transistor (PHEMT);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2006.890347

Filename

4079636