DocumentCode :
1059815
Title :
A simplified model for subpinchoff conduction in depletion-mode IGFET´s
Author :
Hendrickson, Thomas E.
Author_Institution :
Honeywell, Inc., Plymuth, MN
Volume :
25
Issue :
4
fYear :
1978
fDate :
4/1/1978 12:00:00 AM
Firstpage :
435
Lastpage :
441
Abstract :
An expression is developed for the 
characteristics of a depletion-mode device in the subpinchoff region. This expression is found to correlate well with experimental results taken on n-channel polysilicon gate devices, predicting a region of exponential current rise with gate voltage. It is of interest to note that the subpinchoff characteristics of a depletion-mode device form a dual to those of an enhancement-mode device.
characteristics of a depletion-mode device in the subpinchoff region. This expression is found to correlate well with experimental results taken on n-channel polysilicon gate devices, predicting a region of exponential current rise with gate voltage. It is of interest to note that the subpinchoff characteristics of a depletion-mode device form a dual to those of an enhancement-mode device.Keywords :
Channel bank filters; Doping; Geometry; Neodymium; Solid state circuits; Taylor series; Voltage; Writing;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1978.19104
Filename :
1479498
Link To Document :
