DocumentCode
1059815
Title
A simplified model for subpinchoff conduction in depletion-mode IGFET´s
Author
Hendrickson, Thomas E.
Author_Institution
Honeywell, Inc., Plymuth, MN
Volume
25
Issue
4
fYear
1978
fDate
4/1/1978 12:00:00 AM
Firstpage
435
Lastpage
441
Abstract
An expression is developed for the 
characteristics of a depletion-mode device in the subpinchoff region. This expression is found to correlate well with experimental results taken on n-channel polysilicon gate devices, predicting a region of exponential current rise with gate voltage. It is of interest to note that the subpinchoff characteristics of a depletion-mode device form a dual to those of an enhancement-mode device.
characteristics of a depletion-mode device in the subpinchoff region. This expression is found to correlate well with experimental results taken on n-channel polysilicon gate devices, predicting a region of exponential current rise with gate voltage. It is of interest to note that the subpinchoff characteristics of a depletion-mode device form a dual to those of an enhancement-mode device.Keywords
Channel bank filters; Doping; Geometry; Neodymium; Solid state circuits; Taylor series; Voltage; Writing;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1978.19104
Filename
1479498
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