DocumentCode
1059823
Title
Analytical thermal response of a multiple-layer device under the semi-infinite approximation
Author
Zommer, Nathan ; Feucht, Donald L.
Author_Institution
Hewlett-Packard Company, Palo Alto, CA
Volume
25
Issue
4
fYear
1978
fDate
4/1/1978 12:00:00 AM
Firstpage
441
Lastpage
448
Abstract
An analytical method for the analysis of the transient thermal response of a multiple-layer semi-infinite solid-state device is described. The method uses the Laplace transform to obtain solutions of the coupled partial differential equations. The solutions indicate the time limits for which the
dependance of the surface temperature is valid. The temperature distribution within the layers indicates that an exponential type distribution results. As an example, computations were carried out on the structure of a typical soft-soldered power transistor, using a digital computer.
dependance of the surface temperature is valid. The temperature distribution within the layers indicates that an exponential type distribution results. As an example, computations were carried out on the structure of a typical soft-soldered power transistor, using a digital computer.Keywords
Laplace equations; Nonhomogeneous media; Partial differential equations; Power transistors; Solid state circuits; Temperature dependence; Temperature distribution; Thermal conductivity; Transient analysis; Transient response;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1978.19105
Filename
1479499
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