DocumentCode :
1059823
Title :
Analytical thermal response of a multiple-layer device under the semi-infinite approximation
Author :
Zommer, Nathan ; Feucht, Donald L.
Author_Institution :
Hewlett-Packard Company, Palo Alto, CA
Volume :
25
Issue :
4
fYear :
1978
fDate :
4/1/1978 12:00:00 AM
Firstpage :
441
Lastpage :
448
Abstract :
An analytical method for the analysis of the transient thermal response of a multiple-layer semi-infinite solid-state device is described. The method uses the Laplace transform to obtain solutions of the coupled partial differential equations. The solutions indicate the time limits for which the t^{1/2} dependance of the surface temperature is valid. The temperature distribution within the layers indicates that an exponential type distribution results. As an example, computations were carried out on the structure of a typical soft-soldered power transistor, using a digital computer.
Keywords :
Laplace equations; Nonhomogeneous media; Partial differential equations; Power transistors; Solid state circuits; Temperature dependence; Temperature distribution; Thermal conductivity; Transient analysis; Transient response;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1978.19105
Filename :
1479499
Link To Document :
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