• DocumentCode
    1059823
  • Title

    Analytical thermal response of a multiple-layer device under the semi-infinite approximation

  • Author

    Zommer, Nathan ; Feucht, Donald L.

  • Author_Institution
    Hewlett-Packard Company, Palo Alto, CA
  • Volume
    25
  • Issue
    4
  • fYear
    1978
  • fDate
    4/1/1978 12:00:00 AM
  • Firstpage
    441
  • Lastpage
    448
  • Abstract
    An analytical method for the analysis of the transient thermal response of a multiple-layer semi-infinite solid-state device is described. The method uses the Laplace transform to obtain solutions of the coupled partial differential equations. The solutions indicate the time limits for which the t^{1/2} dependance of the surface temperature is valid. The temperature distribution within the layers indicates that an exponential type distribution results. As an example, computations were carried out on the structure of a typical soft-soldered power transistor, using a digital computer.
  • Keywords
    Laplace equations; Nonhomogeneous media; Partial differential equations; Power transistors; Solid state circuits; Temperature dependence; Temperature distribution; Thermal conductivity; Transient analysis; Transient response;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1978.19105
  • Filename
    1479499