DocumentCode
1059891
Title
An analysis of equivalent circuit with gate protection in MOS devices
Author
Agatsuma, TAkashi ; Ishi, Shigeo
Author_Institution
Hitachi, Ltd., Tokyo, Japan
Volume
25
Issue
4
fYear
1978
fDate
4/1/1978 12:00:00 AM
Firstpage
491
Lastpage
492
Abstract
The dependence of the resistance associated with the equivalent circuit with gate protection on the electrical breakdown voltage was analyzed in terms of the transient solution of the equivalent circuit. The series resistance for the input voltage and the dynamic resistance in the breakdown region of the protective diode are found to have pronounced effects on the electrical breakdown voltage of the gate oxide, while the distributed resistance has a lesser effect on it.
Keywords
Breakdown voltage; Circuit analysis; Electric breakdown; Electric resistance; Equivalent circuits; Humans; Immune system; MOS devices; Protection; Transient analysis;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1978.19112
Filename
1479506
Link To Document