Title :
Gate dielectric constant engineering for suppression of ambipolar conduction in CNTFETs
Author :
Ossaimee, M. ; Gamal, S. ; Shaker, A.
Author_Institution :
Fac. of Eng., Ain Shams Univ., Cairo, Egypt
Abstract :
MOSFET-like CNTFETs suffer from band-to-band tunnelling, which in turn causes ambipolar conduction. A new structure based on the gate dielectric constant engineering is proposed. It is observed that the dielectric constant (k) plays an important role in modifying the energy band diagram. Therefore, by selecting suitable values of k over the source, channel and drain regions the tunnelling path at the source-channel interface could be eliminated. Consequently, the ambipolar conduction is suppressed.
Keywords :
MOSFET; carbon nanotube field effect transistors; tunnelling; C; MOSCNT; MOSFET-like CNTFET; ambipolar conduction suppression; band-to-band tunnelling; carbon nanotube transistor; channel region; drain region; energy band diagram; gate dielectric constant engineering; source region;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2014.4453
