Large-signal computer simulations of the contact, circuit, and bias dependence of X-band transferred electron oscillators

We present a treatment synthesizing the roles of the contact and the circuit for -band length transferred electron devices sustaining self-excited oscillations. The contact is modeled with specific cathode electric-field relations. The circuit is modeled with lumped elements. The scope of the simulation is relevant to both high-efficiency InP oscillations and the moderate-efficiency GaAs oscillations.