DocumentCode :
1059978
Title :
Large-signal computer simulations of the contact, circuit, and bias dependence of X-band transferred electron oscillators
Author :
Grubin, H.L.
Author_Institution :
United Technologies Research Center, East Hartford, CT
Volume :
25
Issue :
5
fYear :
1978
fDate :
5/1/1978 12:00:00 AM
Firstpage :
511
Lastpage :
519
Abstract :
We present a treatment synthesizing the roles of the contact and the circuit for 
-band length transferred electron devices sustaining self-excited oscillations. The contact is modeled with specific cathode electric-field relations. The circuit is modeled with lumped elements. The scope of the simulation is relevant to both high-efficiency InP oscillations and the moderate-efficiency GaAs oscillations.
-band length transferred electron devices sustaining self-excited oscillations. The contact is modeled with specific cathode electric-field relations. The circuit is modeled with lumped elements. The scope of the simulation is relevant to both high-efficiency InP oscillations and the moderate-efficiency GaAs oscillations.Keywords :
Cathodes; Circuit synthesis; Computer simulation; Differential equations; Electrons; Gallium arsenide; Gunn devices; Indium phosphide; Oscillators; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1978.19120
Filename :
1479514
Link To Document :
