Title :
DFB Lasers With Deeply Etched Vertical Grating Based on InAs–InP Quantum-Dash Structures
Author :
Mathwig, Klaus ; Kaiser, Wolfgang ; Somers, André ; Reithmaier, Johann Peter ; Forchel, Alfred ; Ohira, Kazuya ; Ullah, Saeed M. ; Arai, Shigehisa
fDate :
3/1/2007 12:00:00 AM
Abstract :
Distributed feedback lasers with first-order vertical grating based on AlInGaAs-InAs-InP quantum-dash lasers were fabricated by electron beam lithography and Cl2-Ar reactive ion etching with an electron cyclotron resonance source. Low threshold currents and single-mode operation with sidemode suppression ratios of 48 dB and a direct modulation bandwidth of 5.5 GHz were demonstrated
Keywords :
III-V semiconductors; cyclotron resonance; diffraction gratings; distributed feedback lasers; electron beam lithography; etching; indium compounds; laser modes; optical modulation; quantum dot lasers; 5.5 GHz; AlInGaAs-InAs-InP; AlInGaAs-InAs-InP lasers; Cl2-Ar reactive ion etching; InAs-InP; InAs-InP quantum-dash structures; deep etching; direct modulation bandwidth; distributed feedback lasers; electron beam lithography; electron cyclotron resonance source; quantum dot lasers; quantum-dash lasers; sidemode suppression ratio; single-mode operation; vertical grating; Bandwidth; Cyclotrons; Distributed feedback devices; Electron beams; Etching; Gratings; Laser feedback; Lithography; Resonance; Threshold current; Deep etching; distributed feedback (DFB) laser; quantum dot; vertical grating;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.891206
