DFB Lasers With Deeply Etched Vertical Grating Based on InAs–InP Quantum-Dash Structures

Author

Mathwig, Klaus ; Kaiser, Wolfgang ; Somers, André ; Reithmaier, Johann Peter ; Forchel, Alfred ; Ohira, Kazuya ; Ullah, Saeed M. ; Arai, Shigehisa

Volume

19

Issue

5

fYear

2007

fDate

3/1/2007 12:00:00 AM

Firstpage

264

Lastpage

266

Abstract

Distributed feedback lasers with first-order vertical grating based on AlInGaAs-InAs-InP quantum-dash lasers were fabricated by electron beam lithography and Cl₂-Ar reactive ion etching with an electron cyclotron resonance source. Low threshold currents and single-mode operation with sidemode suppression ratios of 48 dB and a direct modulation bandwidth of 5.5 GHz were demonstrated

Keywords

III-V semiconductors; cyclotron resonance; diffraction gratings; distributed feedback lasers; electron beam lithography; etching; indium compounds; laser modes; optical modulation; quantum dot lasers; 5.5 GHz; AlInGaAs-InAs-InP; AlInGaAs-InAs-InP lasers; Cl₂-Ar reactive ion etching; InAs-InP; InAs-InP quantum-dash structures; deep etching; direct modulation bandwidth; distributed feedback lasers; electron beam lithography; electron cyclotron resonance source; quantum dot lasers; quantum-dash lasers; sidemode suppression ratio; single-mode operation; vertical grating; Bandwidth; Cyclotrons; Distributed feedback devices; Electron beams; Etching; Gratings; Laser feedback; Lithography; Resonance; Threshold current; Deep etching; distributed feedback (DFB) laser; quantum dot; vertical grating;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2007.891206

Filename

4079674