Title :
Thermal-oxide gate GaAs MOSFET´s
Author :
Takagi, H. ; Kano, G. ; Teramoto, I.
Author_Institution :
Matsushita Electronics Corporation Research Laboratory, Takatsuki, Osaka, Japan
fDate :
5/1/1978 12:00:00 AM
Abstract :
The first thermal-oxide gate GaAs MOSFET of the deep-depletion mode is reported. The gate oxide, which has been grown by the new GaAs oxidation technique in the As2O3vapor, is so chemically stable that it can be subjected to the fabrication process. Measurement of some dc characteristics of the device fabricated has shown a strikingly suppressed hysteresis.
Keywords :
DH-HEMTs; Distortion measurement; Equivalent circuits; Frequency modulation; Gallium arsenide; Harmonic analysis; Harmonic distortion; Light emitting diodes; Optical distortion; Thermal conductivity;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19131
