Title :
Reconfigurable Memristive Device Technologies
Author :
Edwards, Arthur H. ; Barnaby, Hugh J. ; Campbell, Kristy A. ; Kozicki, Michael N. ; Wei Liu ; Marinella, Matthew J.
Author_Institution :
Space Vehicles Directorate, Air Force Res. Lab., Kirtland AFB, NM, USA
Abstract :
In this paper, we present a review of the state of the art in memristor technologies. Along with ionic conducting devices [i.e., conductive bridging random access memory (CBRAM)], we include phase change, and organic/organo-metallic technologies, and we review the most recent advances in oxide-based memristor technologies. We present progress on 3-D integration techniques, and we discuss the behavior of more mature memristive technologies in extreme environments.
Keywords :
memristor circuits; phase change memories; three-dimensional integrated circuits; 3D integration techniques; CBRAM; conductive bridging random access memory; ionic conducting devices; organic-organo-metallic technologies; oxide-based memristor technologies; phase change technologies; Electrodes; Ionic conducting devices; Mathematical model; Memristors; Metallic technologies; Metals; Reconfigurable architectures; Three-dimensional displays; 3-D integration; Memristor; ReRAM; radiation effects;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/JPROC.2015.2441752
