An analysis of wide-band transferred electron devices

The trapping conditions of a high-field domain at the anode are studied by varying doping density, applied bias voltage, and doping notch depth and width near the cathode. It is shown that the frequency band of negative conductance of the trapped-domain mode depends significantly on the doping density, and a diode having the doping density of 3 × 10¹⁵/cm³exhibits the negative conductance over the wide range from 4 GHz to 42 GHz. The upper frequency limit of the negative conductance is due to the series resistance in the low-field region and the lower limit is determined by carrier transit-time effects in high-field region. The operation mode of a trapped-domain diode will change into a traveling dipole or accumulation mode from a trapped-domain mode depending on the doping density and the operation frequency for a large-signal operation.