DocumentCode :
1060293
Title :
Voltage distribution in n+-n-n+and metal-cathode n-n+GaAs X-band oscillators using a SEM
Author :
Tee, W. John ; Farquhar, Stuart G. ; Gopinath, A.
Author_Institution :
Standard Telecommunication Laboratories, Harlow, England
Volume :
25
Issue :
6
fYear :
1978
fDate :
6/1/1978 12:00:00 AM
Firstpage :
655
Lastpage :
659
Abstract :
Time-averaged and dynamic results have been obtained in n+-n-n+and metal cathode n-n+GaAs 
-band devices, using a new voltage measurement scheme in the SEM. The n+-n-n+devices show accumulation layer propagation, and the metal-cathode devices show a trapped dipole domain behavior.
-band devices, using a new voltage measurement scheme in the SEM. The n+-n-n+devices show accumulation layer propagation, and the metal-cathode devices show a trapped dipole domain behavior.Keywords :
Cathodes; Electron beams; Electron emission; Gallium arsenide; Gunn devices; Oscillators; Probes; Scanning electron microscopy; Semiconductor devices; Voltage measurement;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1978.19150
Filename :
1479544
Link To Document :
