DocumentCode :
1060394
Title :
A 2-watt X-band silicon power transistor
Author :
Yuan, Han-tzong ; Wu, You-Sun ; Kruger, James B.
Author_Institution :
Texas Instruments, Inc., Dallas, TX
Volume :
25
Issue :
6
fYear :
1978
fDate :
6/1/1978 12:00:00 AM
Firstpage :
731
Lastpage :
736
Abstract :
A silicon power transistor for use at 
-band has been developed utilizing e-beam lithography and ion implantation. The transistor has a bar size of 0.5 × 1 mm2and consists of four 27.5 × 75-µm2active cells. With a specially designed package, the combined output power of four cells operating at common base Class 
mode is nearly 2 W CW at 8 GHz and almost 1.5 W CW at 10 GHz.
-band has been developed utilizing e-beam lithography and ion implantation. The transistor has a bar size of 0.5 × 1 mm2and consists of four 27.5 × 75-µm2active cells. With a specially designed package, the combined output power of four cells operating at common base Class mode is nearly 2 W CW at 8 GHz and almost 1.5 W CW at 10 GHz.Keywords :
Electromagnetic heating; Frequency; Microwave devices; Microwave transistors; Packaging; Phased arrays; Power amplifiers; Power generation; Power transistors; Silicon;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1978.19161
Filename :
1479555
Link To Document :
