DocumentCode :
1060489
Title :
Current-Voltage Characteristics of Superconductive Heterostructure Arrays
Author :
Ghamsari, Behnood G. ; Majedi, A.Hamed
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON, Canada
Volume :
19
Issue :
3
fYear :
2009
fDate :
6/1/2009 12:00:00 AM
Firstpage :
737
Lastpage :
740
Abstract :
A systematic approach is presented to calculate the I-V characteristic of a general superconductive multilayer heterostructure, consisting of superconductors(S), normal metals(N), semiconductors(Sm) and insulators(I), with finite transparency and effective mass mismatch at the junctions. The transfer matrix method is used to obtain the scattering probability amplitudes of quasiparticles for the Andreev and ordinary reflection as well as the transmission with and without branch-crossing based on the solutions of the Bogoliubov-de Gennes equation. The method is then applied to study a niobium NSNSN structure with variable thickness of layers.
Keywords :
characteristics measurement; superconducting arrays; superconducting junction devices; transfer function matrices; Andreev reflection; Bogoliubov-de Gennes equation; I-V characteristic calculation; current-voltage characteristics; niobium NSNSN structure; scattering probability amplitude; superconductive heterostructure array; superconductive multilayer heterostructure; transfer matrix method; Andreev reflection; Bogoliubov-de Gennes equation; superconductive heterostructures; superconductive super lattices;
fLanguage :
English
Journal_Title :
Applied Superconductivity, IEEE Transactions on
Publisher :
ieee
ISSN :
1051-8223
Type :
jour
DOI :
10.1109/TASC.2009.2018540
Filename :
5067166
Link To Document :
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