Title :
Mode-dependent retardation in (Ga,Al)P waveguide modulators
Author :
Bortfeld, David P.
Author_Institution :
David Sarnoff Research Center, Princeton, NJ, USA
fDate :
3/1/1975 12:00:00 AM
Abstract :
Theoretically predicted mode-dependent modulation in (Ga,Al)P waveguide modulators for which the depletion region is small compared to the guide width is demonstrated experimentally. At 10 V the measured retardations of the three lowest order modes are 0.36, 0.78, and 1.13 rad, respectively.
Keywords :
Capacitive sensors; Diodes; Frequency; Microscopy; P-n junctions; Semiconductor process modeling; Shape; Tellurium; Waveguide junctions; Waveguide theory;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1975.1068570
