A 1-D Photonic Band Gap Tunable Optical Filter in (110) Silicon

Author

Lipson, Ariel ; Yeatman, Eric M.

Author_Institution

Microsaic Syst. Ltd., Guildford

Volume

16

Issue

3

fYear

2007

fDate

6/1/2007 12:00:00 AM

Firstpage

521

Lastpage

527

Abstract

In this paper, we describe an electrostatically tunable optical bandpass filter that is fabricated in (110) silicon. Deep reactive-ion etching is the main process that is used to fabricate the overall device structure. To create the highly parallel surfaces that are needed for the photonic band gap elements, electrochemical (KOH) etching of the vertical (111) planes is then used. Back etching is used to release the moving parts. Fiber pigtails are attached in etched alignment grooves, and fiber-fiber insertion loss below 11 dB was obtained. The measured passband width was 3 nm with a tuning range of 8 nm.

Keywords

band-pass filters; micro-optomechanical devices; optical filters; optical tuning; photonic band gap; silicon; sputter etching; (110) silicon; 1D photonic band gap; KOH etching; MEMS filter; Si; back etching; deep reactive-ion etching; electrochemical etching; electrostatically tunable filter; fiber pigtails; fiber-fiber insertion loss; optical bandpass filter; tunable optical filter; vertical (111) planes; Band pass filters; Etching; Micromechanical devices; Mirrors; Optical filters; Optical resonators; Passband; Photonic band gap; Reflectivity; Silicon; Anisotropic etching; optical filter; photonic band gap (PBG); silicon-on-insulator (SOI);

fLanguage

English

Journal_Title

Microelectromechanical Systems, Journal of

Publisher

ieee

ISSN

1057-7157

Type

jour

DOI

10.1109/JMEMS.2007.892894

Filename

4276811