DocumentCode
1060881
Title
SOS Device radiation effects and hardening
Author
Buchanan, Bobbyl ; Neamen, Donald A. ; Shedd, Walter M.
Author_Institution
Rome Air Development Center (RADC), Hanscom, MA
Volume
25
Issue
8
fYear
1978
fDate
8/1/1978 12:00:00 AM
Firstpage
959
Lastpage
970
Abstract
The status of radiation-hardening problems common to both C-MOS/SOS and C-MOS/Bulk and the role that the silicon-on-sapphire technology plays as a "dielectric isolation hardening process" fis briefly presented, The new radiation effects problems that are a result of implementing C-MOS technology in SOS instead of in bulk silicon are delineated and put into perspective The main emphasis is on back-channel leakage currents and the novel problerns such as hysterisis effects associated with n-channel "kink" effects, Experimental techniques utilized in identifying the unique C-MOS/SOS radiation effects problems and processing techniques utilized in solving these problems are summarized.
Keywords
CMOS technology; Circuits; Insulation; Ionizing radiation; MOS devices; MOSFETs; Protection; Radiation effects; Radiation hardening; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1978.19208
Filename
1479602
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