Specific Features of XGM in QD-SOA

Author

Ezra, Yosef Ben ; Lembrikov, B.I. ; Haridim, M.

Author_Institution

Holon Inst. of Technol., Holon

Volume

43

Issue

8

fYear

2007

Firstpage

730

Lastpage

737

Abstract

The peculiarities of a cross-gain modulation (XGM) in quantum-dot semiconductor optical amplifier (QD SOAs) related to the inhomogeneous broadening are theoretically studied. We have solved numerically the electron rate equations for the QD SOA model including an excited state, a ground state and a continuum wetting layer (WL), and the propagation equations for the pump and the signal lightwaves. It is shown that XGM in QD SOA is possible for a comparatively large detuning close to the inhomogeneous broadening because in such a case QDs with substantially different resonant frequencies interact directly through WL.

Keywords

excited states; ground states; light propagation; optical modulation; quantum dot lasers; semiconductor optical amplifiers; QD-SOA; XGM; continuum wetting layer; cross-gain modulation; electron rate equations; excited state; ground state; inhomogeneous broadening; propagation equations; quantum-dot semiconductor optical amplifiers; signal lightwaves; Nonlinear optics; Optical distortion; Optical mixing; Optical modulation; Optical pumping; Optical signal processing; Optical wavelength conversion; Quantum dots; Semiconductor optical amplifiers; Stimulated emission; Cross-gain modulation (XGM); optical networks; quantum dot (QD); semiconductor optical amplifier (SOA); wavelength conversion (WC);

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2007.901587

Filename

4276830