• DocumentCode
    1060947
  • Title

    Nonradiative Recombination in Multiple Layer In(Ga)As Quantum-Dot Lasers

  • Author

    Sandall, Ian C. ; Smowton, Peter M. ; Liu, Hui-Yun ; Hopkinson, Mark

  • Author_Institution
    Cardiff Univ., Cardiff
  • Volume
    43
  • Issue
    8
  • fYear
    2007
  • Firstpage
    698
  • Lastpage
    703
  • Abstract
    The segmented contact technique has been used to study the effects on nonradiative recombination of stacking multiple quantum-dot layers. As the number of stacked layers is increased a shift in the balance of dots in the bimodal dot distribution is observed due to a reduction in the number in the smaller dot size subset. This is attributed to an increase in the density of defect islands, as the number of layers is increased, that preferentially take material from the smaller dots, and lead to an increased level of nonradiative recombination per layer at low injection level. A second nonradiative process is apparent at higher injection level, which is related to the population of the small dot size subset. Spontaneous radiative efficiency was improved in a five-layer sample where the large to small dot size energy separation and relative density of the large dot size subset were increased.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser beams; nonradiative transitions; quantum dot lasers; InAs; InGaAs; bimodal dot distribution; injection level.; nonradiative process; nonradiative recombination; quantum-dot lasers; segmented contact technique; stacking multiple quantum-dot layers; Councils; Gallium arsenide; Quantum dot lasers; Quantum dots; Radiative recombination; Semiconductor lasers; Spontaneous emission; Stacking; Temperature; Threshold current; Quantum dots (QDs); semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2007.901583
  • Filename
    4276834