DocumentCode
1060947
Title
Nonradiative Recombination in Multiple Layer In(Ga)As Quantum-Dot Lasers
Author
Sandall, Ian C. ; Smowton, Peter M. ; Liu, Hui-Yun ; Hopkinson, Mark
Author_Institution
Cardiff Univ., Cardiff
Volume
43
Issue
8
fYear
2007
Firstpage
698
Lastpage
703
Abstract
The segmented contact technique has been used to study the effects on nonradiative recombination of stacking multiple quantum-dot layers. As the number of stacked layers is increased a shift in the balance of dots in the bimodal dot distribution is observed due to a reduction in the number in the smaller dot size subset. This is attributed to an increase in the density of defect islands, as the number of layers is increased, that preferentially take material from the smaller dots, and lead to an increased level of nonradiative recombination per layer at low injection level. A second nonradiative process is apparent at higher injection level, which is related to the population of the small dot size subset. Spontaneous radiative efficiency was improved in a five-layer sample where the large to small dot size energy separation and relative density of the large dot size subset were increased.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser beams; nonradiative transitions; quantum dot lasers; InAs; InGaAs; bimodal dot distribution; injection level.; nonradiative process; nonradiative recombination; quantum-dot lasers; segmented contact technique; stacking multiple quantum-dot layers; Councils; Gallium arsenide; Quantum dot lasers; Quantum dots; Radiative recombination; Semiconductor lasers; Spontaneous emission; Stacking; Temperature; Threshold current; Quantum dots (QDs); semiconductor lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2007.901583
Filename
4276834
Link To Document