Effect of Micro-Structured Copper as Cathode Material for P3HT-Based Diode

Author

Kesavan, Arul Varman ; Ramamurthy, Praveen C.

Author_Institution

Dept. of Mater. Eng., Indian Inst. of Sci., Bangalore, India

Volume

14

Issue

2

fYear

2015

fDate

Mar-15

Firstpage

218

Lastpage

223

Abstract

Here, the effect of micro-structured cathode material on the device performance of indium tin oxide/poly(3-hexylethiophene)/copper diode (ITO/P3HT/Cu) is investigated. Two different forms of copper namely bulk metal (Cu{B}) and nanoparticle (Cu{N}) were used as top electrode to probe its effect on device performance. Crystallographic structure and nanoscale morphology of top Cu electrodes were characterized using X-ray diffraction and scanning electron microscopy. Electrode formed by evaporation of copper nanoparticle showed enhancement in current density. From capacitance based spectroscopy we observed that density of trap states in ITO/P3HT/copper larger size grain (Cu-LG) are one order greater than that in ITO/P3HT/copper smaller size grain (Cu-SG) device.

Keywords

Schottky diodes; X-ray diffraction; capacitance; cathodes; copper; crystal structure; current density; electronic density of states; evaporation; grain size; indium compounds; polymers; scanning electron microscopy; semiconductor materials; tin compounds; Cu; Cu electrodes; ITO; SEM; X-ray diffraction; XRD; capacitance based spectroscopy; copper nanoparticle evaporation; crystallographic structure; current density; density of trap states; device performance; grain size; indium tin oxide-poly(3-hexylethiophene)-copper diode; microstructured cathode material effect; microstructured copper effect; nanoscale morphology; scanning electron microscopy; Capacitance; Copper; Electrodes; Indium tin oxide; Surface morphology; Surface treatment; Copper electrode; Current density; Interface; current density; electronic properties; interface; metal nanoparticle; organic Schottky barrier device;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2014.2380431

Filename

6994867