Title :
Cross-gate MNOS memory device
fDate :
8/1/1978 12:00:00 AM
Abstract :
A novel MNOS device structure is described. It solves the parasitic leakage problem, sometimes also known as the sidewalk effect.
Keywords :
Aluminum; EPROM; Electrodes; Large scale integration; Leakage current; MOS devices; Metallization; Nonvolatile memory; Region 4; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19226
