DocumentCode :
1061081
Title :
In-process measurement of memory properties of MNOS devices
Author :
Multani, Jagir S. ; Kosicki, Bernard B. ; Sandhu, Jagtar S.
Author_Institution :
General Instrument Corporation, Hicksville, NY
Volume :
25
Issue :
8
fYear :
1978
fDate :
8/1/1978 12:00:00 AM
Firstpage :
1072
Lastpage :
1074
Abstract :
A simple, easy to use 
technique has been developed for in-process measurement of memory properties of MNOS devices. No metallization of the wafers is required and the technique is applicable to device wafers directly after the memory nitride/oxide deposition. Using this technique, good correlation of charge retention properties of memory nitride-oxide capacitors before metallization with finished test transistors after metallization has been found.
technique has been developed for in-process measurement of memory properties of MNOS devices. No metallization of the wafers is required and the technique is applicable to device wafers directly after the memory nitride/oxide deposition. Using this technique, good correlation of charge retention properties of memory nitride-oxide capacitors before metallization with finished test transistors after metallization has been found.Keywords :
Capacitance-voltage characteristics; Capacitors; Circuits; EPROM; Electron devices; Geometry; Large scale integration; Metallization; Silicon; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1978.19227
Filename :
1479621
Link To Document :
