DocumentCode
1061081
Title
In-process measurement of memory properties of MNOS devices
Author
Multani, Jagir S. ; Kosicki, Bernard B. ; Sandhu, Jagtar S.
Author_Institution
General Instrument Corporation, Hicksville, NY
Volume
25
Issue
8
fYear
1978
fDate
8/1/1978 12:00:00 AM
Firstpage
1072
Lastpage
1074
Abstract
A simple, easy to use 
technique has been developed for in-process measurement of memory properties of MNOS devices. No metallization of the wafers is required and the technique is applicable to device wafers directly after the memory nitride/oxide deposition. Using this technique, good correlation of charge retention properties of memory nitride-oxide capacitors before metallization with finished test transistors after metallization has been found.
technique has been developed for in-process measurement of memory properties of MNOS devices. No metallization of the wafers is required and the technique is applicable to device wafers directly after the memory nitride/oxide deposition. Using this technique, good correlation of charge retention properties of memory nitride-oxide capacitors before metallization with finished test transistors after metallization has been found.Keywords
Capacitance-voltage characteristics; Capacitors; Circuits; EPROM; Electron devices; Geometry; Large scale integration; Metallization; Silicon; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1978.19227
Filename
1479621
Link To Document