DocumentCode
1061123
Title
A high cutoff frequency planar Schottky diode with a stripe geometry junction
Author
Araki, Tohru
Author_Institution
Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
Volume
25
Issue
9
fYear
1978
fDate
9/1/1978 12:00:00 AM
Firstpage
1091
Lastpage
1093
Abstract
Design and experimental results of a planar Schottky-barrier diode suitable for use in MIC´s are presented. The Schottky junction has a stripe geometry with a closely located ohmic contact. This geometry is effective in reducing the skin-effect parasitic resistance to yield a high cutoff frequency. The experimental diode has been fabricated using n and n+GaAs layers selectively grown on a semi-insulating substrate. A zero-bias cutoff frequency of more than 700 GHz has been obtained.
Keywords
Circuit testing; Cutoff frequency; Gallium arsenide; Geometry; Ohmic contacts; Schottky barriers; Schottky diodes; Semiconductor diodes; Substrates; Thermal resistance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1978.19231
Filename
1479625
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