Title :
Physics-Based PiN Diode SPICE Model for Power-Circuit Simulation
Author :
Buiatti, Gustavo Malagoni ; Cappelluti, Federica ; Ghione, Giovanni
Author_Institution :
Politecnico di Torino, Turin
Abstract :
A physics-based model for PiN power diodes is developed and implemented as a SPICE subcircuit. The model is based on a distributed equivalent circuit representation of the PiN base region, which is obtained by solving the ambipolar diffusion equation with the finite difference method. The model is validated against experimental characterization that is carried out on the commercial fast recovery power diodes. Comparisons between the results of the SPICE model with experimental and simulation results taken from the literature and from SILVACO mixed-mode simulations are also presented. Finally, the simulation of a realistic power circuit demonstrates the practical suitability of the proposed model for circuit design in terms of computational efficiency, convergence, and robustness.
Keywords :
SPICE; circuit simulation; equivalent circuits; finite difference methods; p-i-n diodes; power semiconductor diodes; semiconductor device models; PiN power diodes; SPICE subcircuit; ambipolar diffusion equation; distributed equivalent circuit representation; finite difference method; physics-based model; power-circuit simulation; Circuit simulation; Circuit synthesis; Computational efficiency; Computational modeling; Convergence; Difference equations; Diodes; Equivalent circuits; Finite difference methods; SPICE; Device modeling; Fast REcovery Diode (FRED); PiN power diode; discrete power device; power semiconductor device;
Journal_Title :
Industry Applications, IEEE Transactions on
DOI :
10.1109/TIA.2007.900492
