DocumentCode
1061212
Title
A comprehensive model for Q switching in semiconductor lasers
Author
Thomas, Ben ; Adams, M.J. ; Gründorfer, Stephan
Author_Institution
University of Wales Institute of Science and Technology, Cardiff, Wales, United Kingdom
Volume
11
Issue
7
fYear
1975
fDate
7/1/1975 12:00:00 AM
Firstpage
528
Lastpage
532
Abstract
By combining a carrier concentration-dependent loss term with our earlier time-dependent saturable absorption loss term we have produced a comprehensive theory for 
switching which successfully accounts for the results so far reported. The concentration-dependent loss term shows a superlinear dependence with current due to the decrease of real guiding at the p-n junction. This increase in loss, however, reaches a maximum and shows a slight decrease at higher concentrations due to the onset of weak imaginary guiding.
switching which successfully accounts for the results so far reported. The concentration-dependent loss term shows a superlinear dependence with current due to the decrease of real guiding at the p-n junction. This increase in loss, however, reaches a maximum and shows a slight decrease at higher concentrations due to the onset of weak imaginary guiding.Keywords
Absorption; Delay effects; Laser modes; Laser theory; Optical losses; Optical pulses; P-n junctions; Semiconductor lasers; Temperature dependence;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1975.1068629
Filename
1068629
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