• DocumentCode
    1061229
  • Title

    Millimeter-wave GaAs read IMPATT diodes

  • Author

    Adlerstein, Michael G. ; Wallace, Roger N. ; Steele, Samuel R.

  • Author_Institution
    Raytheon Company, Waltham, MA
  • Volume
    25
  • Issue
    9
  • fYear
    1978
  • fDate
    9/1/1978 12:00:00 AM
  • Firstpage
    1151
  • Lastpage
    1156
  • Abstract
    We have designed, fabricated, and evaluated gallium arsenide Read IMPATT diodes for Ka-band (36-38 GHz)operation. The devices were packaged units intended for manufacturability and high yield. Oscillator output power as high as 710-mW CW was obtained at 9-percent efficiency. This paper describes design and fabrication techniques employed and discusses the potential and limitations of such devices.
  • Keywords
    Doping profiles; Frequency; Gallium arsenide; Manufacturing; Microwave devices; Microwave oscillators; Millimeter wave technology; Packaging; Power generation; Schottky diodes;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1978.19240
  • Filename
    1479634
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1061229