• DocumentCode
    1061240
  • Title

    Rapid interpretation of the MOS-C C-t transient

  • Author

    Pierret, Robert F.

  • Author_Institution
    Purdue University, West Lafayette, IN
  • Volume
    25
  • Issue
    9
  • fYear
    1978
  • fDate
    9/1/1978 12:00:00 AM
  • Firstpage
    1157
  • Lastpage
    1159
  • Abstract
    A procedure for rapidly and accurately deducing the generation lifetime from metal-oxide-semiconductor capacitor C-t transient data is presented, explained, and illustrated.
  • Keywords
    Capacitance measurement; Capacitors; Conductors; Data analysis; Helium; Monitoring; Niobium; Semiconductor process modeling; Temperature; Transient analysis;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1978.19241
  • Filename
    1479635
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1061240