DocumentCode :
1061240
Title :
Rapid interpretation of the MOS-C C-t transient
Author :
Pierret, Robert F.
Author_Institution :
Purdue University, West Lafayette, IN
Volume :
25
Issue :
9
fYear :
1978
fDate :
9/1/1978 12:00:00 AM
Firstpage :
1157
Lastpage :
1159
Abstract :
A procedure for rapidly and accurately deducing the generation lifetime from metal-oxide-semiconductor capacitor 
transient data is presented, explained, and illustrated.
transient data is presented, explained, and illustrated.Keywords :
Capacitance measurement; Capacitors; Conductors; Data analysis; Helium; Monitoring; Niobium; Semiconductor process modeling; Temperature; Transient analysis;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1978.19241
Filename :
1479635
Link To Document :
