• DocumentCode
    1061329
  • Title

    Anisotropic etching of silicon

  • Author

    Bean, K.E. ; Bean, Kenneth E.

  • Author_Institution
    Texas Instruments, Inc., Dallas, TX
  • Volume
    25
  • Issue
    10
  • fYear
    1978
  • fDate
    10/1/1978 12:00:00 AM
  • Firstpage
    1185
  • Lastpage
    1193
  • Abstract
    Anisotropic etching of silicon has become an important technology in silicon semiconductor processing during the past ten years. It will continue to gain stature and acceptance as standard processing technology in the next few years. Anisotropic etching of
  • Keywords
    Anisotropic magnetoresistance; Chemical technology; Electrodes; Electron devices; Frequency; Hafnium; Ink; Integrated circuit technology; Silicon; Wet etching;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1978.19250
  • Filename
    1479644
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1061329