Title :
Nonplanar power field-effect transistors
Author :
Salama, C. Andre T ; Oakes, James G.
Author_Institution :
University of Toronto, Toronto, Ont., Canada
fDate :
10/1/1978 12:00:00 AM
Abstract :
This paper reviews the criteria involved in the design of silicon power field-effect transistors. Particular emphasis is placed on recent nonplanar structures which will, in the near future, present a serious challenge to bipolar power transistors as linear amplifiers and high-speed switches.
Keywords :
Bipolar transistors; Breakdown voltage; Circuits; FETs; Frequency; Gallium arsenide; MOSFETs; Power generation; Power transistors; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19256