DocumentCode :
1061463
Title :
Liquid phase epitaxial In1-x Gax P1-z Asz /GaAs1-y Py heterojunction lasers
Author :
Coleman, J.J. ; Holonyak, N., Jr. ; Lubowise, M. ; Wright, P.D. ; Groves, W.O. ; Keune, D.
Author_Institution :
Dept. of Electrical Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Ill.
Volume :
11
Issue :
7
fYear :
1975
fDate :
7/1/1975 12:00:00 AM
Firstpage :
471
Lastpage :
476
Abstract :
The growth and laser properties of In1-x Gax P1-z Asz / GaAs1-y Py single heterojunction laser diodes are described. High-quality p-type In1-x Gax P1-z Asz layers are grown by liquid phase epitaxy (LPE) on n-type VPE GaAs1-y Py substrates of composition 
. Laser operation (77 K) of these quaternary-ternary heterojunctions is demonstrated at shorter wavelengths (<6300 Å) and lower thresholds ( 
A/cm2) than comparable GaAs1-y Py homojunctions. The increase observed in threshold current ( 
) between 
and 
GaAs1-y Py substrates is attributed to the usual effect of EX approaching 
near the direct-indirect transition. From the well-defined cavity mode structure observed on these hetero-junctions, data are obtained at relatively high energy on the index dispersion quantity 
, which increases monotonically with photon energy and provides a reference for the distinctly different behavior observed on N-doped GaAs1-y Py 
.
. Laser operation (77 K) of these quaternary-ternary heterojunctions is demonstrated at shorter wavelengths (<6300 Å) and lower thresholds ( A/cm2) than comparable GaAs ) between and GaAs near the direct-indirect transition. From the well-defined cavity mode structure observed on these hetero-junctions, data are obtained at relatively high energy on the index dispersion quantity , which increases monotonically with photon energy and provides a reference for the distinctly different behavior observed on N-doped GaAs .Keywords :
Diode lasers; Epitaxial growth; Erbium; Gallium arsenide; Heterojunctions; Lattices; Optical sensors; Read only memory; Substrates; Threshold current;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1975.1068650
Filename :
1068650
Link To Document :
