Title :
A Novel Nanocomposite With Photo-Polymerization for Wafer Level Application
Author :
Sun, Yangyang ; Jiang, Hongjin ; Zhu, Lingbo ; Wong, C.P.
Author_Institution :
Georgia Inst. of Technol., Atlanta
fDate :
3/1/2008 12:00:00 AM
Abstract :
A novel nanocomposite photo-curable material which can act both as a photoresist and a stress redistribution layer applied on the wafer level was synthesized and studied. In the experiments, 20-nm silica fillers were modified by a silane coupling agent through a hydrolysis and condensation reaction and then incorporated into the epoxy matrix. A photo-sensitive initiator was added into the formulation which can release cations after ultraviolet exposure and initiate the epoxy crosslinking reaction. The photo-crosslinking reaction of the epoxy made it a negative tone photoresist. The curing reaction of the nanocomposites was monitored by a differential scanning calorimeter with the photo-calorimetric accessory. The thermal mechanical properties of photo-cured nanocomposites thin film were also measured. It was found that the moduli change of the nanocomposites as the filler loading increasing did not follow the Mori-Tanaka model, which indicated that the nanocomposite was not a simple two-phase structure as the composite with micron size filler. The addition of nano-sized silica fillers reduced the thermal expansion and improved the stiffness of the epoxy, with only a minimal effect on the optical transparency of the epoxy, which facilitated the complete photo reaction in the epoxy.
Keywords :
condensation; curing; nanocomposites; photoresists; polymerisation; condensation reaction; epoxy matrix; hydrolysis reaction; nanocomposite photo-curable material; photo polymerization; photo-calorimetric accessory; photo-cured nanocomposites thin film; photoresist; silane coupling agent; silica filler; size 20 nm; stress redistribution layer; wafer level application; Nanocomposite; photo polymerization; thermal expansion; wafer level packaging;
Journal_Title :
Components and Packaging Technologies, IEEE Transactions on
DOI :
10.1109/TCAPT.2008.916809