DocumentCode
1061509
Title
Direct modulation of a double-heterostructure laser using a Schottky-barrier-gate Gunn-effect digital device
Author
Yanai, Hisayoshi ; Yano, Mitsuhiro ; Kamiya, Taneshi
Author_Institution
University of Tokyo, Tokyo, Japan
Volume
11
Issue
7
fYear
1975
fDate
7/1/1975 12:00:00 AM
Firstpage
519
Lastpage
524
Abstract
By using a Schottky-barrier-gate Gunn-effect digital device the direct modulation of a GaAs-Alx Ga1-x As double-heterostructure laser was achieved with a rise time of 250 ps. The dependence of the optical waveforms on the bias-current levels was investigated in detail. The results are compared with a rate-equation analysis. A discrepancy between the present theory and the experiment indicates the existence of an additional relaxation mechanism.
Keywords
Circuits; Digital modulation; Diode lasers; High speed optical techniques; Laser theory; Optical modulation; Optical pulse generation; Optical pulses; Pulse modulation; Resistors;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1975.1068655
Filename
1068655
Link To Document