DocumentCode :
1061533
Title :
Low-loss p-i-n diode for high-power MIC phase shifter
Author :
Swartz, George A. ; Rosen, Arye ; Ho, Pang T. ; Schwarzmann, Alfred
Author_Institution :
RCA Laboratories, Princeton, NJ
Volume :
25
Issue :
11
fYear :
1978
fDate :
11/1/1978 12:00:00 AM
Firstpage :
1297
Lastpage :
1301
Abstract :
Low-loss p-i-n diodes designed for installation in an MIC 3-bit F-band phase shifter have been fabricated from bulk-grown silicon wafers with deep-diffused contact layers. The breakdown potential of these diodes exceeds 1000 V. The p-i-n diodes have a series resistance of 0.24 Ω at a forward current of 50 mA and have a 
of 800 at -40-V bias. Each diode in a 180° bit phase shifter can handle 3.5-kW peak power. The 3-bit 
-band phase shifter constructed with six p-i-n diodes can sustain 5-kW peak power (50-µs pulse, 0.8-percent duty cycle). The phase shifter has an average loss of 1 dB under 50-mA forward bias and -40-V reverse bias.
of 800 at -40-V bias. Each diode in a 180° bit phase shifter can handle 3.5-kW peak power. The 3-bit -band phase shifter constructed with six p-i-n diodes can sustain 5-kW peak power (50-µs pulse, 0.8-percent duty cycle). The phase shifter has an average loss of 1 dB under 50-mA forward bias and -40-V reverse bias.Keywords :
Conductivity; Contact resistance; Electric breakdown; Heat sinks; Microwave integrated circuits; P-i-n diodes; Phase shifters; Phased arrays; Radar antennas; Silicon;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1978.19269
Filename :
1479663
Link To Document :
