Author :
Brow, Dale M. ; Connery, Richard J.
Author_Institution :
General Electric Corporate Research and Development, Schenectady, NY
fDate :
11/1/1978 12:00:00 AM
Abstract :
The n-channel high-frequency dual-gate MOSFET´s or tetrodes made using Mo gate (RMOS) self-aligned processing are described. This includes design and processing considerations, manufacturing yield, and high-frequency performance. Each of the two gates are protected with p-n diode structures which exhibit silicon-controlled rectifier action, UHF data on devices built on epitaxial wafers show high-gain narrow-bandwidth characteristics.
Keywords :
Diodes; Etching; Frequency response; Glass; Integrated circuit yield; Ion implantation; Process design; Protection; Radiofrequency amplifiers; Silicon compounds;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19270
