• DocumentCode
    1061579
  • Title

    Corner currents in p+-n-n+diodes with n+isolation diffusions

  • Author

    Roulston, David J. ; Elsaid, Mohamed H.

  • Author_Institution
    University of Waterloo, Waterloo, Ont., Canada
  • Volume
    25
  • Issue
    11
  • fYear
    1978
  • fDate
    11/1/1978 12:00:00 AM
  • Firstpage
    1327
  • Lastpage
    1328
  • Abstract
    The magnitude of corner currents in rectangular diffused p+-n-n+diodes with deep n+isolation diffusions is discussed. Curves are given to illustrate the importance of this current in diodes and IIL structures.
  • Keywords
    Boundary conditions; Charge carrier lifetime; Diodes; Electron devices; Epitaxial layers; Equations; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1978.19274
  • Filename
    1479668
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1061579