Title :
Corner currents in p+-n-n+diodes with n+isolation diffusions
Author :
Roulston, David J. ; Elsaid, Mohamed H.
Author_Institution :
University of Waterloo, Waterloo, Ont., Canada
fDate :
11/1/1978 12:00:00 AM
Abstract :
The magnitude of corner currents in rectangular diffused p+-n-n+diodes with deep n+isolation diffusions is discussed. Curves are given to illustrate the importance of this current in diodes and IIL structures.
Keywords :
Boundary conditions; Charge carrier lifetime; Diodes; Electron devices; Epitaxial layers; Equations; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19274
