Title :
The influence of nitride thickness variations on the switching speed of MNOS memory transistors
Author_Institution :
Technical University of Denmark, Lyngby, Denmark
fDate :
11/1/1978 12:00:00 AM
Abstract :
The influence of nitride thickness variations on the switching speed of MNOS memory transistors is examined. The switching time constant is calculated as a function of the nitride thickness using a model of modified Fowler-Nordheim injection. The calculated characteristics compare well with measured characteristics and show a strong dependence on the nitride thickness.
Keywords :
Capacitance; Character generation; Insulation; Permittivity; Region 1; Region 2; Region 3; Switching circuits; Thickness measurement; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19275
