• DocumentCode
    1061606
  • Title

    Influence of surface states on the measurement of field-effect mobility

  • Author

    Hsu, S.T.

  • Author_Institution
    RCA Corporation, Princeton, NJ
  • Volume
    25
  • Issue
    11
  • fYear
    1978
  • fDate
    11/1/1978 12:00:00 AM
  • Firstpage
    1331
  • Lastpage
    1332
  • Abstract
    The effect of surface states on the measurement of field mobility has been analyzed. The result shows that this effect is important when the rate of change of the surface charge density with respect to the surface potential is larger than the mobile charge density at the conductive channel of the MOSFET.
  • Keywords
    Charge carrier processes; Current measurement; Current-voltage characteristics; Fabrication; Impurities; MOSFET circuits; Scattering; Stress; Temperature; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1978.19276
  • Filename
    1479670
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1061606