DocumentCode :
1061617
Title :
Monolithic Ga1-x Inx As diode lasers
Author :
Doerbeck, F.H. ; Lawley, K.L. ; Blum, F.A. ; Campbell, J.C.
Author_Institution :
Texas Instruments, Inc., Dallas, TX, USA
Volume :
11
Issue :
7
fYear :
1975
fDate :
7/1/1975 12:00:00 AM
Firstpage :
464
Lastpage :
467
Abstract :
Monolithic homojunction diode lasers have been fabricated from vapor-grown Ga1-x Inx As ( 
) mesa structures with grown optical facets. The Ga1-x Inx As lasers have been operated at 77 K, and similar GaAs mesa devices have lased between 77 K and 300 K. Monolithic arrays of up to six mesa lasers on a single substrate have been operated with all lasers oscillating simultaneously.
) mesa structures with grown optical facets. The GaKeywords :
Diode lasers; Fiber lasers; Gallium arsenide; Optical arrays; Optical device fabrication; Optical pumping; Optical waveguides; Pump lasers; Semiconductor laser arrays; Waveguide lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1975.1068665
Filename :
1068665
Link To Document :
