Sputter Deposition of ${\rm MoSi}_{2}$ Film as a Barrier for Nb-Based Josephson Junction

Recently, sputter-deposited MoSi₂ films have been successfully used as a barrier material in Nb/MoSi₂/Nb Josephson junctions. In this report, we present our study on the deposition conditions of MoSi₂ film for electronics application. We investigated the film stress and sheet resistance as a function of deposition conditions. We also studied the micro-structural change in the film according to the deposition conditions using electron microscopes. We suggest that the thermal strain need to be considered in order to get a reliable junction.