Title :
MA-3 E-beam exposure for semiconductor device lithography
Author :
Weber, E.V. ; Moore, R.D.
fDate :
11/1/1978 12:00:00 AM
Keywords :
Costs; Fabrication; Gallium arsenide; Lithography; Probes; Semiconductor devices; Silicon; Switches; Switching circuits; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19283
