Title :
MP-A4 Nonuniformly doped JFET´s for use in GaAs MESFET circuits: Simulation
Author :
Anderson, G.F. ; Current, K.W. ; Forbes, L.
fDate :
11/1/1978 12:00:00 AM
Keywords :
Circuit simulation; Computational modeling; Gallium arsenide; Indium phosphide; JFET circuits; Josephson junctions; Logic circuits; Logic devices; MESFET circuits; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19284