Title :
MP-A3 switching speed limits of GaAs devices for integrated circuits
Author :
Eastman, L.F. ; Shur, Michael S.
fDate :
11/1/1978 12:00:00 AM
Keywords :
Analytical models; Capacitance; Circuit simulation; Doping; Electron mobility; Gallium arsenide; Gunn devices; MESFETs; Switching circuits; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19285
