Striped-substrate double-heterostructure lasers

A different type of stripe-geometry laser is demonstrated in which current confinement is achieved by selective diffusion of the n-type substrate prior to growth of the GaAs/GaAlAs heterostructure layers. This structure exhibits low room-temperature threshold currents resulting from the small lateral-current spreading from the edges of the stripe. Lowest order transverse-mode operation is achieved for stripe widths of 10μm.